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  • Van der Waals three-body force shell model (VTSM) for the Lattice dynamical studies of Potassium fluoride (15741)
  • Effect of Aluminum mole fraction and well width on the probability density spreading in GaN/AlGaN quantum well (8476)
  • Highly conducting and transparent multilayer films based on ZnO and Mo-doped indium oxide for optoelectronic applications (5046)
  • Last update: 2019-08-27
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    Effect of Aluminum mole fraction and well width on the probability density spreading in GaN/AlGaN quantum well

    p.394-399 

     

    Here, we modeled a novel equation to determine full width at half maxima (FWHM) of probability density in GaN/AlGaN quantum well structures in order to investigate the effect of aluminum mole fraction and well width on the quantum confinement. Solutions of the Schrodinger’s time independent equation have been obtained using Quantum Transmitting Boundary Method (QTBM) and transfer matrix method (TMM) has been used to compute the energy and transmission coefficients. The wave function and probability density have been obtained for single quantum well structure of GaN/AlGaN. The results obtained through our probability density spreading model shows excellent agreement with the analytical results.  Our versatile approach explores the probability density spread in terms of FWHM with simultaneous variations in well widths and Aluminum mole fraction x. Our model provides useful physical insight to optimize structural parameters for the better quantum confinement in emerging GaN based quantum well laser diodes.