The new platform is coming online We are currently moving our platform to the new site available at oam-rc2.inoe.ro
|
INOE Publishing House Integra Natura Omnia et Aeterna
|
JOAM Journal of Optoelectronics and Advanced Materials
|
Online Papers Optoelectronics and Advanced Materials-Rapid Communications (OAM-RC) offers now the possibility to read the papers on-line. Starting with the Issue 1, Volume 1, 2007 you can bring the full papers of OAM-RC on your computer.
|
Last update: 2019-08-27 Visitors: 3611402
|
|
|
Effect of Aluminum mole fraction and well width on the probability density spreading in GaN/AlGaN quantum well p.394-399 Here, we modeled a novel equation to determine full width at half maxima (FWHM) of probability density in GaN/AlGaN quantum well structures in order to investigate the effect of aluminum mole fraction and well width on the quantum confinement. Solutions of the Schrodinger’s time independent equation have been obtained using Quantum Transmitting Boundary Method (QTBM) and transfer matrix method (TMM) has been used to compute the energy and transmission coefficients. The wave function and probability density have been obtained for single quantum well structure of GaN/AlGaN. The results obtained through our probability density spreading model shows excellent agreement with the analytical results. Our versatile approach explores the probability density spread in terms of FWHM with simultaneous variations in well widths and Aluminum mole fraction x. Our model provides useful physical insight to optimize structural parameters for the better quantum confinement in emerging GaN based quantum well laser diodes.
|
|